Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Bipolar transistorDescription: Bipolar Transistor - Bipolar Junction Transistor (BJT) TRANS GP BJT NPN 30V 1A 5PIN18385+$2.060125+$1.907550+$1.8007100+$1.7549500+$1.72442500+$1.68625000+$1.671010000+$1.6481 -
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Category: Bipolar transistorDescription: TSMT PNP 12V 1.5A94145+$2.419225+$2.240050+$2.1146100+$2.0608500+$2.02502500+$1.98025000+$1.962210000+$1.9354 -
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Category: DC/DCconverterDescription: Switching Voltage Regulators IC REG STPDWN SWITCH FIX NEG -5V 5SMP52375+$22.115350+$21.1702200+$20.6410500+$20.50871000+$20.37642500+$20.22515000+$20.13067500+$20.0361 -
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Category: diodeDescription: Standard recovery diode, 400 V, 400 mA, dual isolation, 1.1 V, 2 A7793 -
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Category: Classification of electronic componentsDescription: Standard recovery diode, 600 V, 400 mA, dual isolation, 1.1 V, 2 A9348 -
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Category: MOSpipeDescription: Transistor, MOSFET, N-channel, 2 A, 30 V, 0.154 ohm, 4.5 V, 1.5 V9501 -
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Category: MOSpipeDescription: Transistor, MOSFET, P-channel, 1.5 A, -20 V, 0.34 ohm, -4.5 V, -2 V3849 -
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Category: MOSpipeDescription: Transistor, MOSFET, P-channel, 2A, -30 V, 0.225 ohm, -10 V, -2.5 V7073 -
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Category: MOSpipeDescription: 2.5VThe characteristics of driving N-channel+SBD MOS FET QS5U13 combined N-channel MOSFET in a single TSMT5 packaged Schottky barrier diode. Low pass resistance and fast switching. Low voltage drive (2.5V). Independently connected Schottky barrier diodes have low forward voltage. Application3255 -
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Category: Classification of electronic componentsDescription: 通用晶体管（隔离的晶体管和二极管） General purpose transistor (isolated transistor and diode)8025 -
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Category: Classification of electronic componentsDescription: 小信号肖特基二极管, 双隔离, 30 V, 700 mA, 490 mV, 12 A, 150 °C4244
